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STGW40H65FB

IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGW40H65FB
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 484
  • Description: IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 283W
Base Part Number STGW40
Element Configuration Single
Power Dissipation 283W
Input Type Standard
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 210nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 40ns/142ns
Switching Energy 498mJ (on), 363mJ (off)
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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