STGW40NC60V
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 260W |
| Current Rating | 50A |
| Base Part Number | STGW40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 260W |
| Input Type | Standard |
| Turn On Delay Time | 43 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 17ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 170 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 80A |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Turn On Time | 61 ns |
| Test Condition | 390V, 40A, 3.3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Turn Off Time-Nom (toff) | 247 ns |
| Gate Charge | 214nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 43ns/140ns |
| Switching Energy | 330μJ (on), 720μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
