Parameters | |
---|---|
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | PowerMESH™ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 250W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | STGW40 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 205W |
Input Type | Standard |
Turn On Delay Time | 33 ns |
Power - Max | 250W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 213 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 70A |
JEDEC-95 Code | TO-247AC |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.1V |
Turn On Time | 46 ns |
Test Condition | 390V, 30A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
Turn Off Time-Nom (toff) | 280 ns |
Gate Charge | 126nC |
Current - Collector Pulsed (Icm) | 230A |
Td (on/off) @ 25°C | 33ns/168ns |
Switching Energy | 302μJ (on), 349μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.75V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |