STGW40S120DF3
| Parameters | |
|---|---|
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 468W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.15V |
| Max Collector Current | 80A |
| Reverse Recovery Time | 355 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Turn On Time | 50 ns |
| Test Condition | 600V, 40A, 15 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 40A |
| Turn Off Time-Nom (toff) | 158.46 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 129nC |
| Current - Collector Pulsed (Icm) | 160A |
| Td (on/off) @ 25°C | 35ns/148ns |
| Switching Energy | 1.43mJ (on), 3.83mJ (off) |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 468W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STGW40 |
See Relate Datesheet
