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STGW50H60DF

STGW50H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGW50H60DF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 875
  • Description: STGW50H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 360W
Base Part Number STGW50
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Input Type Standard
Turn On Delay Time 62 ns
Power - Max 360W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 205 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Reverse Recovery Time 55 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 91 ns
Test Condition 400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A
Turn Off Time-Nom (toff) 285 ns
IGBT Type Trench Field Stop
Gate Charge 217nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 62ns/178ns
Switching Energy 890μJ (on), 860μJ (off)
Gate-Emitter Voltage-Max 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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