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STGW60V60DF

IGBT 600V 80A 375W TO247


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGW60V60DF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 647
  • Description: IGBT 600V 80A 375W TO247 (Kg)

Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 375W
Base Part Number STGW60
Element Configuration Single
Power Dissipation 375W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 74ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.35V
Test Condition 400V, 60A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 60A
IGBT Type Trench Field Stop
Gate Charge 334nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 60ns/208ns
Switching Energy 750μJ (on), 550μJ (off)
Gate-Emitter Voltage-Max 20V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
See Relate Datesheet

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