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STGW80V60DF

STGW80V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGW80V60DF
  • Package: TO-247-3 Exposed Pad
  • Datasheet: PDF
  • Stock: 416
  • Description: STGW80V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 469W
Base Part Number STGW80
Element Configuration Single
Input Type Standard
Power - Max 469W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 120A
Reverse Recovery Time 60 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.85V
Test Condition 400V, 80A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 80A
IGBT Type Trench Field Stop
Gate Charge 448nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 60ns/220ns
Switching Energy 1.8mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max 20V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Exposed Pad
Number of Pins 3
Weight 38.000013g
See Relate Datesheet

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