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STGWA19NC60HD

STGWA19NC60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGWA19NC60HD
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 156
  • Description: STGWA19NC60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

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Parameters
Turn On Delay Time 25 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 97 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 52A
Reverse Recovery Time 31 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 32 ns
Test Condition 390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 52A
Turn Off Time-Nom (toff) 272 ns
Gate Charge 53nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 25ns/97ns
Switching Energy 85μJ (on), 189μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 25.54mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 208W
Base Part Number STGWA19
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 208W
Case Connection COLLECTOR
Input Type Standard
See Relate Datesheet

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