STGWA30N120KD
| Parameters | |
|---|---|
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 220W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STGWA30 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Input Type | Standard |
| Power - Max | 220W |
| Transistor Application | MOTOR CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 3.85V |
| Max Collector Current | 60A |
| Reverse Recovery Time | 84 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Turn On Time | 57 ns |
| Test Condition | 960V, 20A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.85V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 756 ns |
| Gate Charge | 105nC |
| Current - Collector Pulsed (Icm) | 100A |
| Td (on/off) @ 25°C | 36ns/251ns |
| Switching Energy | 2.4mJ (on), 4.3mJ (off) |
| Gate-Emitter Voltage-Max | 25V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| RoHS Status | ROHS3 Compliant |
| Lifecycle Status | NRND (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~125°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
See Relate Datesheet
