Parameters | |
---|---|
Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 40A |
Turn Off Time-Nom (toff) | 158.46 ns |
IGBT Type | Trench Field Stop |
Gate Charge | 129nC |
Current - Collector Pulsed (Icm) | 160A |
Td (on/off) @ 25°C | 35ns/148ns |
Switching Energy | 1.43mJ (on), 3.83mJ (off) |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Max Power Dissipation | 468W |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | STGWA40 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 468W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.15V |
Max Collector Current | 80A |
Reverse Recovery Time | 355 ns |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 50 ns |
Test Condition | 600V, 40A, 15 Ω, 15V |