Parameters | |
---|---|
Collector Emitter Saturation Voltage | 2.3V |
Turn On Time | 49 ns |
Test Condition | 400V, 20A, 15V |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A |
Turn Off Time-Nom (toff) | 173 ns |
IGBT Type | Trench Field Stop |
Gate Charge | 116nC |
Current - Collector Pulsed (Icm) | 80A |
Td (on/off) @ 25°C | 38ns/149ns |
Switching Energy | 200μJ (on), 130μJ (off) |
Height | 20.1mm |
Length | 15.8mm |
Width | 5mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Max Power Dissipation | 167W |
Base Part Number | STGWT20 |
Pin Count | 2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 167W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 40A |
Collector Emitter Breakdown Voltage | 600V |