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STGWT80H65DFB

IGBT 650V 120A 469W TO3P-3L


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGWT80H65DFB
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 440
  • Description: IGBT 650V 120A 469W TO3P-3L (Kg)

Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.756003g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 469W
Base Part Number STGWT80
Element Configuration Single
Input Type Standard
Power - Max 469W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 120A
Reverse Recovery Time 85 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 80A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A
IGBT Type Trench Field Stop
Gate Charge 414nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 84ns/280ns
Switching Energy 2.1mJ (on), 1.5mJ (off)
Gate-Emitter Voltage-Max 20V
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation Hardening No
See Relate Datesheet

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