Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | PowerMESH™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 260W |
Current Rating | 50A |
Base Part Number | STGY40 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 260W |
Input Type | Standard |
Turn On Delay Time | 43 ns |
Transistor Application | POWER CONTROL |
Rise Time | 19ns |
Drain to Source Voltage (Vdss) | 600V |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 170 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 80A |
Reverse Recovery Time | 44ns |
Continuous Drain Current (ID) | 50A |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.5V |
Turn On Time | 61 ns |
Test Condition | 390V, 40A, 3.3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
Turn Off Time-Nom (toff) | 247 ns |
Gate Charge | 214nC |
Td (on/off) @ 25°C | 43ns/140ns |
Switching Energy | 330μJ (on), 720μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.75V |
Height | 20.3mm |
Length | 15.9mm |
Width | 5.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |