Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | H2PAK-2-8159712 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Series | MDmesh™ K5 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 245 |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | STH12N |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 250W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 250W |
Case Connection | DRAIN |
Turn On Delay Time | 23 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 690m Ω @ 6A, 10V |
Vgs(th) (Max) @ Id | 5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 1370pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 12A Tc |
Gate Charge (Qg) (Max) @ Vgs | 44.2nC @ 10V |
Rise Time | 11ns |
Drain to Source Voltage (Vdss) | 1200V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 18.5 ns |
Turn-Off Delay Time | 68.5 ns |
Continuous Drain Current (ID) | 12A |
Gate to Source Voltage (Vgs) | 30V |
Drain-source On Resistance-Max | 0.69Ohm |
Drain to Source Breakdown Voltage | 1.2kV |
Pulsed Drain Current-Max (IDM) | 48A |
Max Junction Temperature (Tj) | 150°C |
Height | 5mm |
RoHS Status | ROHS3 Compliant |