Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Series | DeepGATE™, STripFET™ VI |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 2.8MOhm |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Base Part Number | STH210 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 300W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300W |
Turn On Delay Time | 34 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.8m Ω @ 90A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 11800pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 180A Tc |
Gate Charge (Qg) (Max) @ Vgs | 171nC @ 10V |
Rise Time | 70ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 71 ns |
Turn-Off Delay Time | 154 ns |
Continuous Drain Current (ID) | 180A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 75V |
Pulsed Drain Current-Max (IDM) | 720A |
Height | 4.8mm |
Length | 15.8mm |
Width | 10.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |