Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Series | STripFET™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Additional Feature | ULTRA LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | STH240 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 300W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300W |
Case Connection | DRAIN |
Turn On Delay Time | 49 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.5m Ω @ 60A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 11550pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 180A Tc |
Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 110 ns |
Continuous Drain Current (ID) | 180A |
Threshold Voltage | 4.5V |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0025Ohm |
Drain to Source Breakdown Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 720A |
Avalanche Energy Rating (Eas) | 500 mJ |
Max Junction Temperature (Tj) | 175°C |
Height | 4.7mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |