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STH240N10F7-2

N-Channel 100 V 2.5 mOhm 300 W STripFET? F7 Power Mosfet-H2PAK-2


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STH240N10F7-2
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 789
  • Description: N-Channel 100 V 2.5 mOhm 300 W STripFET? F7 Power Mosfet-H2PAK-2 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series STripFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STH240
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 49 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0025Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 720A
Avalanche Energy Rating (Eas) 500 mJ
Max Junction Temperature (Tj) 175°C
Height 4.7mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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