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STH300NH02L-6

MOSFET N-CH 24V 180A H2PAK-6


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STH300NH02L-6
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 537
  • Description: MOSFET N-CH 24V 180A H2PAK-6 (Kg)

Details

Tags

Parameters
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series Automotive, AEC-Q101, STripFET™ III
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 1.2MOhm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STH300
Pin Count 7
JESD-30 Code R-PSSO-G6
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7050pF @ 15V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 109nC @ 10V
Rise Time 275ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 94.4 ns
Turn-Off Delay Time 138 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 24V
Avalanche Energy Rating (Eas) 1600 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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