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STH310N10F7-6

MOSFET N-CH 100V 180A H2PAK-2


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STH310N10F7-6
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 843
  • Description: MOSFET N-CH 100V 180A H2PAK-2 (Kg)

Details

Tags

Parameters
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series DeepGATE™, STripFET™ VII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STH310
JESD-30 Code R-PSSO-G6
Number of Elements 1
Power Dissipation-Max 315W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 315W
Case Connection DRAIN
Turn On Delay Time 62 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 108ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 148 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 3.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 120A
Drain-source On Resistance-Max 0.0025Ohm
Drain to Source Breakdown Voltage 100V
Height 4.8mm
Length 15.25mm
Width 10.4mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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