STH3N150-2
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab) Variant |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | H2PAK-2-8159712 |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Base Part Number | STH3N |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 140W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 140W |
| Case Connection | DRAIN |
| Turn On Delay Time | 24 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9 Ω @ 1.3A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 939pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 29.3nC @ 10V |
| Rise Time | 47ns |
| Drain to Source Voltage (Vdss) | 1500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 61 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 2.5A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 9Ohm |
| Drain to Source Breakdown Voltage | 1.5kV |
| Avalanche Energy Rating (Eas) | 450 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 5mm |
| Length | 10.4mm |
| Width | 15.8mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
