STL100N1VH5
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ V |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 3MOhm |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Base Part Number | STL100 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 60W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 60W |
| Case Connection | DRAIN |
| Turn On Delay Time | 14.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3m Ω @ 12.5A, 4.5V |
| Vgs(th) (Max) @ Id | 500mV @ 250μA (Min) |
| Input Capacitance (Ciss) (Max) @ Vds | 2085pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 26.5nC @ 4.5V |
| Rise Time | 31.6ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 50 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 500mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 12V |
| Avalanche Energy Rating (Eas) | 300 mJ |
| Height | 950μm |
| Length | 5.2mm |
| Width | 6.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
