Parameters | |
---|---|
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | STripFET™ V |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 11.7Ohm |
Additional Feature | ULTRA LOW-ON RESISTANCE |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Base Part Number | STL10 |
Pin Count | 8 |
Number of Elements | 1 |
Power Dissipation-Max | 2W Ta 50W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 50W |
Turn On Delay Time | 4 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 19m Ω @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 9A Tc |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
Rise Time | 4.2ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±22V |
Fall Time (Typ) | 3.5 ns |
Turn-Off Delay Time | 21 ns |
Continuous Drain Current (ID) | 9A |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 22V |
Drain Current-Max (Abs) (ID) | 9A |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 36A |
Avalanche Energy Rating (Eas) | 150 mJ |
Nominal Vgs | 1 V |
Radiation Hardening | No |
REACH SVHC | No SVHC |