Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Number of Pins | 5 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Series | DeepGATE™, STripFET™ VI |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 1.3MOhm |
Additional Feature | ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Base Part Number | STL160 |
Pin Count | 8 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 136W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 80W |
Case Connection | DRAIN |
Turn On Delay Time | 18.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.3m Ω @ 17.5A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 6375pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 160A Tc |
Gate Charge (Qg) (Max) @ Vgs | 61.5nC @ 4.5V |
Rise Time | 32ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 54 ns |
Turn-Off Delay Time | 107.5 ns |
Continuous Drain Current (ID) | 160A |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |
Avalanche Energy Rating (Eas) | 900 mJ |
Height | 880μm |
Length | 4.75mm |
Width | 5.75mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |