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STL160N3LLH6

MOSFET N-Ch 30V 0.0011 Ohm 35A STripFET VI


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STL160N3LLH6
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 919
  • Description: MOSFET N-Ch 30V 0.0011 Ohm 35A STripFET VI (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series DeepGATE™, STripFET™ VI
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 1.3MOhm
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Base Part Number STL160
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 136W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 80W
Case Connection DRAIN
Turn On Delay Time 18.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6375pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 61.5nC @ 4.5V
Rise Time 32ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 54 ns
Turn-Off Delay Time 107.5 ns
Continuous Drain Current (ID) 160A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 900 mJ
Height 880μm
Length 4.75mm
Width 5.75mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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