Parameters | |
---|---|
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Rise Time | 45ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 40 ns |
Turn-Off Delay Time | 90 ns |
Continuous Drain Current (ID) | 19.5A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 25V |
Drain to Source Breakdown Voltage | 600V |
Pulsed Drain Current-Max (IDM) | 78A |
Avalanche Energy Rating (Eas) | 700 mJ |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Number of Pins | 5 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Series | FDmesh™ II |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - annealed |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STL23 |
Pin Count | 5 |
JESD-30 Code | S-XDSO-N4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3W Ta 150W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3W |
Case Connection | DRAIN |
Turn On Delay Time | 25 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 180m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 19.5A Tc |