Parameters | |
---|---|
Base Part Number | STL8 |
JESD-30 Code | R-PDSO-F5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 4.3W Ta 70W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 70W |
Case Connection | DRAIN |
Turn On Delay Time | 8.7 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 35m Ω @ 4A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 970pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20A Tc |
Gate Charge (Qg) (Max) @ Vgs | 20.5nC @ 10V |
Factory Lead Time | 1 Week |
Rise Time | 9.6ns |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Mount | Surface Mount |
Vgs (Max) | ±20V |
Mounting Type | Surface Mount |
Fall Time (Typ) | 5.2 ns |
Package / Case | 8-PowerVDFN |
Number of Pins | 8 |
Turn-Off Delay Time | 50.6 ns |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Continuous Drain Current (ID) | 20A |
Packaging | Tape & Reel (TR) |
Gate to Source Voltage (Vgs) | 20V |
Series | Automotive, AEC-Q101, STripFET™ III |
Drain-source On Resistance-Max | 0.05Ohm |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Drain to Source Breakdown Voltage | 100V |
Max Junction Temperature (Tj) | 175°C |
Number of Terminations | 5 |
Height | 1mm |
Radiation Hardening | No |
ECCN Code | EAR99 |
RoHS Status | ROHS3 Compliant |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |