Parameters | |
---|---|
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Resistance | 8.5Ohm |
Terminal Finish | Matte Tin (Sn) - annealed |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 600V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 400mA |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STN1H |
Pin Count | 4 |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.3W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.3W |
Case Connection | DRAIN |
Turn On Delay Time | 6.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8.5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 156pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 400mA Tc |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Rise Time | 5ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 25 ns |
Turn-Off Delay Time | 19 ns |
Continuous Drain Current (ID) | 500mA |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 0.4A |
Drain to Source Breakdown Voltage | 600V |
Avalanche Energy Rating (Eas) | 25 mJ |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 3 V |
Height | 1.82mm |
Length | 6.5mm |
Width | 3.5mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | SuperMESH™ |
JESD-609 Code | e3 |
Part Status | Active |