Parameters | |
---|---|
Number of Terminations | 4 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Base Part Number | STN1N |
Number of Elements | 1 |
Power Dissipation-Max | 2W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 90pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1A Tc |
Gate Charge (Qg) (Max) @ Vgs | 5.7nC @ 10V |
Rise Time | 5.6ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 12.4 ns |
Continuous Drain Current (ID) | 1A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 1A |
Drain to Source Breakdown Voltage | 200V |
Pulsed Drain Current-Max (IDM) | 4A |
Avalanche Energy Rating (Eas) | 70 mJ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Series | STripFET™ II |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |