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STN4NF06L

STN4NF06L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STN4NF06L
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 770
  • Description: STN4NF06L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 70mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STN4N
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.3W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.3W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 5V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 200 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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