Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | STripFET™ II |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Resistance | 70mOhm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STN4N |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3.3W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.3W |
Case Connection | DRAIN |
Turn On Delay Time | 9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 100m Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 4A Tc |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 5V |
Rise Time | 25ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 4A |
Gate to Source Voltage (Vgs) | 16V |
Drain Current-Max (Abs) (ID) | 4A |
Drain to Source Breakdown Voltage | 60V |
Avalanche Energy Rating (Eas) | 200 mJ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |