Parameters | |
---|---|
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 125W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5.6m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1980pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 100A |
JEDEC-95 Code | TO-220AB |
Factory Lead Time | 1 Week |
Drain-source On Resistance-Max | 0.0056Ohm |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Through Hole |
Pulsed Drain Current-Max (IDM) | 400A |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
DS Breakdown Voltage-Min | 60V |
Transistor Element Material | SILICON |
Avalanche Energy Rating (Eas) | 200 mJ |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
RoHS Status | ROHS3 Compliant |
Series | STripFET™ F7 |
Lead Free | Lead Free |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | STP100 |
JESD-30 Code | R-PSFM-T3 |