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STP110N8F6

Single N-Channel 80 V 200 W 150 nC Silicon Through Hole Mosfet - TO-220-3


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STP110N8F6
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 941
  • Description: Single N-Channel 80 V 200 W 150 nC Silicon Through Hole Mosfet - TO-220-3 (Kg)

Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP110
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 200W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9130pF @ 40V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 110A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.0065Ohm
Pulsed Drain Current-Max (IDM) 440A
DS Breakdown Voltage-Min 80V
Avalanche Energy Rating (Eas) 180 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET™ F6
Part Status Active
See Relate Datesheet

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