STP11NM60
| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 6 ns |
| Continuous Drain Current (ID) | 11A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 44A |
| Height | 6.35mm |
| Length | 31.75mm |
| Width | 12.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | NRND (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 450mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 600V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 11A |
| Base Part Number | STP11N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 160W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 160W |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 450m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 11A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 20ns |
| Drain to Source Voltage (Vdss) | 650V |
See Relate Datesheet
