Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tube |
Series | MDmesh™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 400mOhm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 800V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 11A |
Base Part Number | STP11N |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 150W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 150W |
Turn On Delay Time | 22 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 400m Ω @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1630pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 11A Tc |
Gate Charge (Qg) (Max) @ Vgs | 43.6nC @ 10V |
Rise Time | 17ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 15 ns |
Turn-Off Delay Time | 46 ns |
Continuous Drain Current (ID) | 11A |
Threshold Voltage | 4V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 800V |
Pulsed Drain Current-Max (IDM) | 44A |
Avalanche Energy Rating (Eas) | 400 mJ |
Height | 9.15mm |
Length | 10.4mm |
Width | 4.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |