STP165N10F4
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | DeepGATE™, STripFET™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 5.5MOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STP165 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 315W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 315W |
| Turn On Delay Time | 29.6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.5m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 10500pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| Rise Time | 62ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 106 ns |
| Turn-Off Delay Time | 154 ns |
| Continuous Drain Current (ID) | 120A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 480A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
