Parameters | |
---|---|
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 55 ns |
Continuous Drain Current (ID) | 15A |
Threshold Voltage | 3.75V |
Gate to Source Voltage (Vgs) | 30V |
Drain-source On Resistance-Max | 0.25Ohm |
Drain to Source Breakdown Voltage | 400V |
Pulsed Drain Current-Max (IDM) | 60A |
Avalanche Energy Rating (Eas) | 450 mJ |
Height | 16.4mm |
Length | 10.4mm |
Width | 4.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | SuperMESH™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Base Part Number | STP17N |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 35W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 35W |
Case Connection | ISOLATED |
Turn On Delay Time | 25 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 250m Ω @ 7.5A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 15A Tc |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
Rise Time | 23ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |