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STP18N65M2

MOSFET N-CH 650V 12A TO220


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STP18N65M2
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 570
  • Description: MOSFET N-CH 650V 12A TO220 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ M2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP18N
Power Dissipation-Max 110W Tc
Element Configuration Single
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 330m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 25V
Height 15.75mm
Length 10.4mm
Width 4.6mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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