Parameters | |
---|---|
Input Capacitance (Ciss) (Max) @ Vds | 12800pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 180A Tc |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Rise Time | 108ns |
Mount | Through Hole |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Mounting Type | Through Hole |
Vgs (Max) | ±20V |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Fall Time (Typ) | 40 ns |
Transistor Element Material | SILICON |
Turn-Off Delay Time | 148 ns |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Continuous Drain Current (ID) | 180A |
Series | DeepGATE™, STripFET™ VII |
Threshold Voltage | 3.5V |
JESD-609 Code | e3 |
JEDEC-95 Code | TO-220AB |
Part Status | Active |
Gate to Source Voltage (Vgs) | 20V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Drain to Source Breakdown Voltage | 100V |
Number of Terminations | 3 |
Pulsed Drain Current-Max (IDM) | 720A |
ECCN Code | EAR99 |
Height | 15.75mm |
Length | 10.4mm |
Resistance | 2.7MOhm |
Width | 4.6mm |
Terminal Finish | Tin (Sn) |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Additional Feature | ULTRA LOW RESISTANCE |
Subcategory | FET General Purpose Power |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Technology | MOSFET (Metal Oxide) |
Base Part Number | STP310 |
Number of Elements | 1 |
Power Dissipation-Max | 315W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 315W |
Case Connection | DRAIN |
Turn On Delay Time | 62 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.7m Ω @ 60A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 250μA |