Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Transistor Element Material | SILICON |
Operating Temperature | 175°C TJ |
Packaging | Tube |
Series | STripFET™ II |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | STP46N |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Power Dissipation-Max | 300W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 75m Ω @ 17A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 42A Tc |
Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
Rise Time | 38ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 46 ns |
Turn-Off Delay Time | 80 ns |
Continuous Drain Current (ID) | 42A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.075Ohm |
Drain to Source Breakdown Voltage | 300V |
Avalanche Energy Rating (Eas) | 290 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |