Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | SuperMESH™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - annealed |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Base Part Number | STP4N |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 20W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 20W |
Case Connection | ISOLATED |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.7 Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 3A Tc |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Rise Time | 7ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 11 ns |
Turn-Off Delay Time | 21 ns |
Continuous Drain Current (ID) | 3A |
Threshold Voltage | 3.75V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 3A |
Drain to Source Breakdown Voltage | 500V |
Dual Supply Voltage | 500V |
Nominal Vgs | 3.75 V |
Height | 16.4mm |
Length | 10.4mm |
Width | 4.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |