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STP62NS04Z

STP62NS04Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STP62NS04Z
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 647
  • Description: STP62NS04Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier 0015988_Rev_R
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series MESH OVERLAY™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 15MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 62A
Base Part Number STP62N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 62A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 104ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) Clamped
Fall Time (Typ) 42 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 62A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 18V
Drain Current-Max (Abs) (ID) 40A
Drain to Source Breakdown Voltage 33V
Pulsed Drain Current-Max (IDM) 248A
Avalanche Energy Rating (Eas) 500 mJ
Height 15.75mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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