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STP6N65M2

STMICROELECTRONICS STP6N65M2 Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STP6N65M2
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 536
  • Description: STMICROELECTRONICS STP6N65M2 Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V (Kg)

Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP6N
Number of Channels 1
Power Dissipation-Max 60W Tc
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.35 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 226pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 6.5 ns
Continuous Drain Current (ID) 4A
Threshold Voltage 3V
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Gate to Source Voltage (Vgs) 25V
Mounting Type Through Hole
Drain to Source Breakdown Voltage 650V
Package / Case TO-220-3
Number of Pins 3
REACH SVHC No SVHC
Weight 329.988449mg
RoHS Status ROHS3 Compliant
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™
Part Status Active
See Relate Datesheet

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