banner_page

STP7N105K5

MOSFET N-CH 1050V 4A TO-220AB


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STP7N105K5
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 169
  • Description: MOSFET N-CH 1050V 4A TO-220AB (Kg)

Details

Tags

Parameters
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 1050V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 43 ns
Factory Lead Time 1 Week
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 30V
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Drain Current-Max (Abs) (ID) 4A
Mount Through Hole
Mounting Type Through Hole
Drain to Source Breakdown Voltage 1.05kV
Package / Case TO-220-3
Max Junction Temperature (Tj) 150°C
Height 19.68mm
Operating Temperature -55°C~150°C TJ
RoHS Status ROHS3 Compliant
Packaging Tube
Lead Free Lead Free
Series SuperMESH5™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP7N
Configuration Single
Number of Channels 1
Power Dissipation-Max 110W Tc
Power Dissipation 110W
Turn On Delay Time 17.5 ns
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good