Parameters | |
---|---|
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 2 Ω @ 2A, 10V |
Vgs(th) (Max) @ Id | 5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 4A Tc |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Drain to Source Voltage (Vdss) | 1050V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Turn-Off Delay Time | 43 ns |
Factory Lead Time | 1 Week |
Continuous Drain Current (ID) | 4A |
Gate to Source Voltage (Vgs) | 30V |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Drain Current-Max (Abs) (ID) | 4A |
Mount | Through Hole |
Mounting Type | Through Hole |
Drain to Source Breakdown Voltage | 1.05kV |
Package / Case | TO-220-3 |
Max Junction Temperature (Tj) | 150°C |
Height | 19.68mm |
Operating Temperature | -55°C~150°C TJ |
RoHS Status | ROHS3 Compliant |
Packaging | Tube |
Lead Free | Lead Free |
Series | SuperMESH5™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | STP7N |
Configuration | Single |
Number of Channels | 1 |
Power Dissipation-Max | 110W Tc |
Power Dissipation | 110W |
Turn On Delay Time | 17.5 ns |