banner_page

STP7NM80

STP7NM80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STP7NM80
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 650
  • Description: STP7NM80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Lifecycle Status NRND (Last Updated: 8 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.05Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP7N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 90W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
Case Connection ISOLATED
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.05 Ω @ 3.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 3.25A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6.5A
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 26A
Avalanche Energy Rating (Eas) 240 mJ
Height 15.75mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good