Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Series | MDmesh™ II |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 790mOhm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Base Part Number | STP8N |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 45W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 45W |
Turn On Delay Time | 7 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 790m Ω @ 2.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 364pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Rise Time | 4.4ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 8.8 ns |
Turn-Off Delay Time | 25 ns |
Continuous Drain Current (ID) | 5A |
Threshold Voltage | 3V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 25V |
Drain Current-Max (Abs) (ID) | 5A |
Drain to Source Breakdown Voltage | 500V |
Pulsed Drain Current-Max (IDM) | 20A |
Height | 16.4mm |
Length | 10.4mm |
Width | 4.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |