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STS1NK60Z

STS1NK60Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STS1NK60Z
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 108
  • Description: STS1NK60Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH™
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 250mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STS1
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 5.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15 Ω @ 400mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 94pF @ 25V
Current - Continuous Drain (Id) @ 25°C 250mA Tc
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.25A
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 1A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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