STU2N80K5
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | SuperMESH5™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STU2N |
| Number of Elements | 1 |
| Power Dissipation-Max | 45W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.5 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 105pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 2A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 2A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 2A |
| Pulsed Drain Current-Max (IDM) | 8A |
| DS Breakdown Voltage-Min | 800V |
| Avalanche Energy Rating (Eas) | 60.5 mJ |
| Height | 6.2mm |
| Length | 6.6mm |
| Width | 2.4mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
