STU2NK100Z
| Parameters | |
|---|---|
| Rise Time | 6.5ns |
| Drain to Source Voltage (Vdss) | 1000V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 32.5 ns |
| Turn-Off Delay Time | 41.5 ns |
| Continuous Drain Current (ID) | 1.85A |
| Threshold Voltage | 3.75V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 1kV |
| Pulsed Drain Current-Max (IDM) | 7.4A |
| Height | 6.9mm |
| Length | 6.6mm |
| Width | 2.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | SuperMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | STU2N |
| Pin Count | 4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 70W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 70W |
| Turn On Delay Time | 7.2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.5 Ω @ 900mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 499pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.85A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
See Relate Datesheet
