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STU3LN62K3

MOSFET N-Ch 620V 2.5 Ohm 2.5A SuperMESH 3


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STU3LN62K3
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 501
  • Description: MOSFET N-Ch 620V 2.5 Ohm 2.5A SuperMESH 3 (Kg)

Details

Tags

Parameters
Fall Time (Typ) 27 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 620V
Avalanche Energy Rating (Eas) 90 mJ
Height 6.9mm
Length 6.6mm
Width 2.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Lifecycle Status NRND (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series SuperMESH3™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3Ohm
Additional Feature ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Base Part Number STU3L
Pin Count 3
Number of Elements 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 386pF @ 50V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
See Relate Datesheet

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