Parameters | |
---|---|
Power Dissipation-Max | 60W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 16.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.5 Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 3A Tc |
Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 10V |
Rise Time | 15ns |
Drain to Source Voltage (Vdss) | 800V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 21 ns |
Turn-Off Delay Time | 36 ns |
Continuous Drain Current (ID) | 3A |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 3A |
DS Breakdown Voltage-Min | 800V |
Avalanche Energy Rating (Eas) | 74.5 mJ |
Height | 6.2mm |
Length | 6.6mm |
Width | 2.4mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Weight | 3.949996g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | SuperMESH5™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Base Part Number | STU4N |
Number of Elements | 1 |
Number of Channels | 1 |