Parameters | |
---|---|
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 175°C TJ |
Packaging | Tube |
Series | STripFET™ V |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - annealed |
Additional Feature | ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Base Part Number | STU85 |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 70W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 70W |
Case Connection | DRAIN |
Turn On Delay Time | 6 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5.4m Ω @ 40A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 80A Tc |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
Rise Time | 14ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Vgs (Max) | ±22V |
Fall Time (Typ) | 10.8 ns |
Turn-Off Delay Time | 23.6 ns |
Continuous Drain Current (ID) | 40A |
Threshold Voltage | 2.5V |
Gate to Source Voltage (Vgs) | 22V |
Drain Current-Max (Abs) (ID) | 80A |
Drain to Source Breakdown Voltage | 30V |
Height | 6.9mm |
Length | 6.6mm |
Width | 2.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |