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STU85N3LH5

MOSFET N-CH 30V 80A IPAK


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STU85N3LH5
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 424
  • Description: MOSFET N-CH 30V 80A IPAK (Kg)

Details

Tags

Parameters
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tube
Series STripFET™ V
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STU85
Pin Count 3
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.4m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±22V
Fall Time (Typ) 10.8 ns
Turn-Off Delay Time 23.6 ns
Continuous Drain Current (ID) 40A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 22V
Drain Current-Max (Abs) (ID) 80A
Drain to Source Breakdown Voltage 30V
Height 6.9mm
Length 6.6mm
Width 2.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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