Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | PowerSO-10 Exposed Bottom Pad |
Number of Pins | 10 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Series | STripFET™ III |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 10 |
ECCN Code | EAR99 |
Resistance | 1MOhm |
Terminal Finish | Matte Tin (Sn) - annealed |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 250 |
Base Part Number | STV300 |
Pin Count | 10 |
Number of Elements | 1 |
Power Dissipation-Max | 300W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300W |
Turn On Delay Time | 18 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1m Ω @ 80A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 7055pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 200A Tc |
Gate Charge (Qg) (Max) @ Vgs | 109nC @ 10V |
Rise Time | 275ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V 5V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 94.4 ns |
Turn-Off Delay Time | 138 ns |
Continuous Drain Current (ID) | 200A |
Threshold Voltage | 1.5V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 280A |
Drain to Source Breakdown Voltage | 24V |
Avalanche Energy Rating (Eas) | 2296 mJ |
Height | 3.75mm |
Length | 9.6mm |
Width | 9.5mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |