Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | SuperMESH™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 400mOhm |
Terminal Finish | Matte Tin (Sn) - annealed |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 1kV |
Technology | MOSFET (Metal Oxide) |
Current Rating | 13A |
Base Part Number | STW15N |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 350W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 350W |
Turn On Delay Time | 42 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 550m Ω @ 7.5A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds | 6100pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 15A Tc |
Gate Charge (Qg) (Max) @ Vgs | 256nC @ 10V |
Rise Time | 27ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 35 ns |
Turn-Off Delay Time | 135 ns |
Continuous Drain Current (ID) | 7.5A |
Threshold Voltage | 3.75V |
JEDEC-95 Code | TO-247AC |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 900V |
Pulsed Drain Current-Max (IDM) | 60A |
Height | 20.15mm |
Length | 15.75mm |
Width | 5.15mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |